Method for Forming Dielectric Isolated FinFET

A Novel and Accurate Method for the Design of Dielectric

The development of numerical techniques now permits us to analyze complex structures such as dielectric resonator filters and planar passive elements for coplanar monolithic microwave integrated circuits. In this paper, we describe a novel method for designing dielectric resonator filters. Then a Chebychev band pass filter is designed by coaxially placing high-Q TM01Q dielectric resonators ...

Performance Analysis of Double Gate n-FinFET Using High-k Dielectric Materials

To extend the use of CMOS technology beyond 14 nm node technology, new device materials are required that can enhance the performance of MOSFETs. The use of high-k materials in double gate (DG) MOSFET can triumph over the problem of power dissipation and leakage current. In this paper, we investigated various high-k dielectrics as the gate oxides in a 12 nm SOI FinFET and the performance potent...

Ballistic Quantum-Mechanical Simulation of 10nm FinFET Using CBR Method

presenting a new method for high speed incremental forming

recently, incremental sheet metal forming (ismf) process as one of the new methods in rapid prototyping collection has been considered by researchers. this process is based on a defined path in cnc controller and applies a spherical-head tool that supplies the required pressure for sheet metal forming. despite affirmation of process ability in forming symmetric geometries, some of its aspects s...

A 2.5 Gigawatt Liquid Dielectric Coaxial Pulse Forming Line

The pulse forming line (PFL) can store approximately 600 joules at 100 kilovolts. Line impedance is 0.86 ohm and discharge time into a matched load is 200 nanoseconds. The coaxial line is filled with a mixture of 60% ethylene glycol and 40% water, by weight, yielding the maximum freezing point depression. The dielectric liquid is dearated, deionized and cooled to subzero temperature in order to...